A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes

Khalid, A.-u.-H. , Li, C. , Papageorgiou, V., Pilgrim, N.J., Dunn, G.M. and Cumming, D. (2013) A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes. Microwave and Optical Technology Letters, 55(3), pp. 686-688. (doi: 10.1002/mop.27393)

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Publisher's URL: http://dx.doi.org/10.1002/mop.27393


We present a multiquantum-well channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAs-based planar Gunn diodes. For a 1.14 μm length and 60 μm wide device, the highest power achieved was approximately −4 dBm operating in fundamental mode at 109 GHz, and −26.6 dBm at its second harmonic at 218 GHz. The DC-to-RF conversion efficiency was ∼0.3% for the fundamental mode of oscillation.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib
Authors: Khalid, A.-u.-H., Li, C., Papageorgiou, V., Pilgrim, N.J., Dunn, G.M., and Cumming, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microwave and Optical Technology Letters
ISSN (Online):1098-2760

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG