Piezoelectric oxide semiconductor field effect transistor touch sensing devices

Dahiya, R.S. , Metta, G., Valle, M., Adami, A. and Lorenzelli, L. (2009) Piezoelectric oxide semiconductor field effect transistor touch sensing devices. Applied Physics Letters, 95(3), 034105. (doi:10.1063/1.3184579)

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Abstract

This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin ( ∼ 2.5 μm) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral “sensotronic” unit comprising of transducer and the transistor—thereby sensing as well as conditioning (and processing) the touch signal at “same site.”

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dahiya, Professor Ravinder
Authors: Dahiya, R.S., Metta, G., Valle, M., Adami, A., and Lorenzelli, L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
ISSN:0003-6951
ISSN (Online):1077-3118

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