Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Paterson, Dr Gary and Peralagu, Mr Uthayasankaran
Authors: Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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