Impact of statistical variability on FinFET technology: from device, statistical compact modelling to statistical circuit simulation

Asenov, A. , Cheng, B., Brown, A.R. and Wang, X. (2013) Impact of statistical variability on FinFET technology: from device, statistical compact modelling to statistical circuit simulation. In: van Roermund, A.H.M., Baschirotto, A. and Steyaert, M. (eds.) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, pp. 281-291. ISBN 9781461445876 (doi: 10.1007/978-1-4614-4587-6_15)

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Publisher's URL: http://dx.doi.org/10.1007/978-1-4614-4587-6_15

Abstract

New variability resilient device architectures will be required at the 22 nm CMOS technology node and beyond due to the ever-increasing statistical variability in traditional bulk MOSFETs. A TCAD-based Preliminary Design Kit(PDK) development strategy is present here for a 10 nm SOI FinFET technology, with reliable device statistical variability coming from the comprehensive 3D statistical device simulation and accurate statistical compact modelling. Results from the statistical simulation of a 6T SRAM cell demonstrate the advantages of FinFET technology.

Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen
Authors: Asenov, A., Cheng, B., Brown, A.R., and Wang, X.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Springer
ISBN:9781461445876

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