Asenov, A. , Cheng, B., Brown, A.R. and Wang, X. (2013) Impact of statistical variability on FinFET technology: from device, statistical compact modelling to statistical circuit simulation. In: van Roermund, A.H.M., Baschirotto, A. and Steyaert, M. (eds.) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, pp. 281-291. ISBN 9781461445876 (doi: 10.1007/978-1-4614-4587-6_15)
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Publisher's URL: http://dx.doi.org/10.1007/978-1-4614-4587-6_15
Abstract
New variability resilient device architectures will be required at the 22 nm CMOS technology node and beyond due to the ever-increasing statistical variability in traditional bulk MOSFETs. A TCAD-based Preliminary Design Kit(PDK) development strategy is present here for a 10 nm SOI FinFET technology, with reliable device statistical variability coming from the comprehensive 3D statistical device simulation and accurate statistical compact modelling. Results from the statistical simulation of a 6T SRAM cell demonstrate the advantages of FinFET technology.
Item Type: | Book Sections |
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Status: | Published |
Glasgow Author(s) Enlighten ID: | Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen |
Authors: | Asenov, A., Cheng, B., Brown, A.R., and Wang, X. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | Springer |
ISBN: | 9781461445876 |
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