Papageorgiou, V., Khalid, A.H. , Li, C. and Cumming, D. (2013) Simulation and fabrication of InGaAs planar Gunn diode on InP substrate. In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), Kobe, Japan, 19-23 May 2013,
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Abstract
This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 µm long and 120 micron wide and the measured and simulated results are in excellent agreement.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-Ul-Habib |
Authors: | Papageorgiou, V., Khalid, A.H., Li, C., and Cumming, D. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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