Simulation and fabrication of InGaAs planar Gunn diode on InP substrate

Papageorgiou, V., Khalid, A.H. , Li, C. and Cumming, D. (2013) Simulation and fabrication of InGaAs planar Gunn diode on InP substrate. In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), Kobe, Japan, 19-23 May 2013,

Papageorgiou, V., Khalid, A.H. , Li, C. and Cumming, D. (2013) Simulation and fabrication of InGaAs planar Gunn diode on InP substrate. In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), Kobe, Japan, 19-23 May 2013,

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Abstract

This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 µm long and 120 micron wide and the measured and simulated results are in excellent agreement.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Khalid, Dr Ata-ul-Habib and Cumming, Professor David and Papageorgiou, Mr Vasileios
Authors: Papageorgiou, V., Khalid, A.H., Li, C., and Cumming, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG