Multi-channel GaAs-based planar gunn diodes

Khalid, A. , Li, C. , Dunn, G.M. and Cumming, D.R.S. (2013) Multi-channel GaAs-based planar gunn diodes. In: 40th International Symposium on Compound Semiconductors, Kobe, Japan, 19-23 May 2013,

83933.pdf - Accepted Version



We present a multi-channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAsbased planar Gunn diodes. For a 1.14 μm length and 60 μm wide device, the highest power achieved was approximately -4 dBm operating in fundamental mode at 109 GHz, and -26.6 dBm at its second-harmonic at 218 GHz.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Dunn, Dr Geoffrey and Khalid, Dr Ata-Ul-Habib
Authors: Khalid, A., Li, C., Dunn, G.M., and Cumming, D.R.S.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2013 The Authors
Publisher Policy:Reproduced with the permission of the authors

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG