Khalid, A. , Li, C. , Dunn, G.M. and Cumming, D.R.S. (2013) Multi-channel GaAs-based planar gunn diodes. In: 40th International Symposium on Compound Semiconductors, Kobe, Japan, 19-23 May 2013,
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Abstract
We present a multi-channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAsbased planar Gunn diodes. For a 1.14 μm length and 60 μm wide device, the highest power achieved was approximately -4 dBm operating in fundamental mode at 109 GHz, and -26.6 dBm at its second-harmonic at 218 GHz.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Cumming, Professor David and Dunn, Dr Geoffrey and Khalid, Dr Ata-Ul-Habib |
Authors: | Khalid, A., Li, C., Dunn, G.M., and Cumming, D.R.S. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Copyright Holders: | Copyright © 2013 The Authors |
Publisher Policy: | Reproduced with the permission of the authors |
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