Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis

Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi: 10.1109/TED.2013.2254490)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2013.2254490

Abstract

Conventional bulk CMOS, which is arguably most vulnerable to statistical variability (SV), is the workhorse of the electronic industry for more than three decades. In this paper, the dependence of the SV of key figures of merit on gate geometry, temperature, and body bias in 25-nm gate-length MOSFETs, representative for the 20-nm CMOS technology generation, is systematically investigated using 3-D statistical simulations. The impact of all relevant sources of SV is taken into account. The geometry dependence of the threshold-voltage dispersion (and indeed the dispersion of other key transistor figures of merit) does not necessarily follow the Pelgrom's law due to the complex nonuniform channel doping and the interplay of different SV sources. The DIBL variation, for example, follows a log-normal distribution. The temperature significantly affects the magnitudes of threshold voltage, subthreshold slope, ON/OFF currents, and the corresponding statistical distributions. Reverse body bias increases the threshold voltage and its fluctuation, while forward body bias reduces both of them.

Item Type:Articles
Additional Information:(c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie and Adamu-Lema, Dr Fikru
Authors: Wang, X., Adamu-Lema, F., Cheng, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2013 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Electron Devices 60(5):1547-1554
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
443791Atomic scale simulation of nanoelectronic devicesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E038344/1ENG - ENGINEERING ELECTRONICS & NANO ENG
501811ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)Asen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/G04130X/1ENG - ENGINEERING ELECTRONICS & NANO ENG