Impact ionisation electroluminescence in planar GaAs-based heterostructure gunn diodes: spatial distribution and impact of doping non-uniformities

Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A. , Cumming, D.R.S. , Oxley, C.H., Glover, J. and Kuball, M. (2013) Impact ionisation electroluminescence in planar GaAs-based heterostructure gunn diodes: spatial distribution and impact of doping non-uniformities. Journal of Applied Physics, 113(12), Art. 124505. (doi:10.1063/1.4798270)

Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A. , Cumming, D.R.S. , Oxley, C.H., Glover, J. and Kuball, M. (2013) Impact ionisation electroluminescence in planar GaAs-based heterostructure gunn diodes: spatial distribution and impact of doping non-uniformities. Journal of Applied Physics, 113(12), Art. 124505. (doi:10.1063/1.4798270)

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Abstract

When biased in the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes. This EL is due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. The EL forms non-uniform patterns whose intensity shows short-range intensity variations in the direction parallel to the contacts and decreases along the device channel towards the cathode. This paper employs Monte Carlo models, in conjunction with the experimental data, to analyse these non-uniform EL patterns and to study the carrier dynamics responsible for them. It is found that the short-range lateral (i.e., parallel to the device contacts) EL patterns are probably due to non-uniformities in the doping of the anode contact, illustrating the usefulness of EL analysis on the detection of such inhomogeneities. The overall decreasing EL intensity towards the anode is also discussed in terms of the interaction of holes with the time-dependent electric field due to the transit of the Gunn domains. Due to their lower relative mobility and the low electric field outside of the Gunn domain, freshly generated holes remain close to the anode until the arrival of a new domain accelerates them towards the cathode. When the average over the transit of several Gunn domains is considered, this results in a higher hole density, and hence a higher EL intensity, next to the anode.

Item Type:Articles
Additional Information:Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 113(12), 124505 (2013) and may be found at http://dx.doi.org/10.1063/1.4798270
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Khalid, Dr Ata-ul-Habib
Authors: Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A., Cumming, D.R.S., Oxley, C.H., Glover, J., and Kuball, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
Published Online:27 March 2013
Copyright Holders:Copyright © 2013 American Institute of Physics
First Published:First published in Journal of Applied Physics 113(12):124505
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG