Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A. , Cumming, D.R.S. , Oxley, C.H., Glover, J. and Kuball, M. (2013) Impact ionisation electroluminescence in planar GaAs-based heterostructure gunn diodes: spatial distribution and impact of doping non-uniformities. Journal of Applied Physics, 113(12), Art. 124505. (doi: 10.1063/1.4798270)
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Abstract
When biased in the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes. This EL is due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. The EL forms non-uniform patterns whose intensity shows short-range intensity variations in the direction parallel to the contacts and decreases along the device channel towards the cathode. This paper employs Monte Carlo models, in conjunction with the experimental data, to analyse these non-uniform EL patterns and to study the carrier dynamics responsible for them. It is found that the short-range lateral (i.e., parallel to the device contacts) EL patterns are probably due to non-uniformities in the doping of the anode contact, illustrating the usefulness of EL analysis on the detection of such inhomogeneities. The overall decreasing EL intensity towards the anode is also discussed in terms of the interaction of holes with the time-dependent electric field due to the transit of the Gunn domains. Due to their lower relative mobility and the low electric field outside of the Gunn domain, freshly generated holes remain close to the anode until the arrival of a new domain accelerates them towards the cathode. When the average over the transit of several Gunn domains is considered, this results in a higher hole density, and hence a higher EL intensity, next to the anode.
| Item Type: | Articles |
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| Additional Information: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 113(12), 124505 (2013) and may be found at http://dx.doi.org/10.1063/1.4798270 |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Khalid, Dr Ata-Ul-Habib |
| Authors: | Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A., Cumming, D.R.S., Oxley, C.H., Glover, J., and Kuball, M. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| ISSN (Online): | 1089-7550 |
| Published Online: | 27 March 2013 |
| Copyright Holders: | Copyright © 2013 American Institute of Physics |
| First Published: | First published in Journal of Applied Physics 113(12):124505 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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