Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C. and Asenov, A. (2011) Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study. In: Intel European Research and Innovation Conference, Dublin, Ireland, 12-14 Mar 2011,
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Abstract
Introduction of high mobility channel materials including III-Vs and Ge into future CMOS generations offer the potential for enhanced transport properties compared to Si. The Implant Free Quantum Well (IFQW) architecture offers an attractive design to introduce these materials, providing excellent electrostatic integrity. Statistical variability introduced by the discreteness of charge and granularity of matter has become a key factor for current and future generations of MOSFETs and in this work numerical simulations are used to critically assess the statistical variability in IFQW transistors and compare results with equivalent conventional Si ‘bulk’ MOSFETs.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | No |
Glasgow Author(s) Enlighten ID: | Towie, Dr Ewan and Asenov, Professor Asen and Benbakhti, Dr Brahim and Riddet, Mr Craig |
Authors: | Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Copyright Holders: | Copyright © 2011 The Author |
Publisher Policy: | Reproduced with the permission of the Author |
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