Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study

Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C. and Asenov, A. (2011) Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study. In: Intel European Research and Innovation Conference, Dublin, Ireland, 12-14 Mar 2011,

[img]
Preview
Text
78454.pdf

620kB

Abstract

Introduction of high mobility channel materials including III-Vs and Ge into future CMOS generations offer the potential for enhanced transport properties compared to Si. The Implant Free Quantum Well (IFQW) architecture offers an attractive design to introduce these materials, providing excellent electrostatic integrity. Statistical variability introduced by the discreteness of charge and granularity of matter has become a key factor for current and future generations of MOSFETs and in this work numerical simulations are used to critically assess the statistical variability in IFQW transistors and compare results with equivalent conventional Si ‘bulk’ MOSFETs.

Item Type:Conference Proceedings
Status:Published
Refereed:No
Glasgow Author(s) Enlighten ID:Towie, Dr Ewan and Asenov, Professor Asen and Benbakhti, Dr Brahim and Riddet, Mr Craig
Authors: Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Copyright Holders:Copyright © 2011 The Author
Publisher Policy:Reproduced with the permission of the Author

University Staff: Request a correction | Enlighten Editors: Update this record