Ferrus, T., Rossi, A., Tanner, M.G., Podd, G., Chapman, P. and Williams, D.A. (2011) Detection of charge motion in a non-metallic silicon isolated double quantum dot. New Journal of Physics, 13(10), p. 103012. (doi: 10.1088/1367-2630/13/10/103012)
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Abstract
As semiconductor device dimensions are reduced to the nanometer scale, the effects of high-defect-density surfaces on the transport properties become important to such an extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here, we have investigated the mechanism of the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single-electron transistor (SET), both fabricated from highly phosphorus-doped silicon wafers. Despite the absence of direct charge transfer between the detector and the double dot structure, efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. The results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the SET dot.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Tanner, Dr Michael |
Authors: | Ferrus, T., Rossi, A., Tanner, M.G., Podd, G., Chapman, P., and Williams, D.A. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | New Journal of Physics |
Publisher: | Institute of Physics Publishing Ltd. |
ISSN: | 1367-2630 |
ISSN (Online): | 1367-2630 |
Published Online: | 11 October 2011 |
Copyright Holders: | Copyright © 2011 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft |
First Published: | First published in New Journal of Physics 13(10):103012 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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