High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier

Akbar, J., Hou, L. , Haji, M., Strain, M., Marsh, J.H. , Bryce, A.C. and Kelly, A.E. (2013) High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. IEEE Photonics Technology Letters, 25(3), pp. 253-256. (doi: 10.1109/LPT.2012.2231858)

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We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Strain, Dr Michael and Akbar, Mr Jehan and Haji, Dr Mohsin and Kelly, Professor Anthony
Authors: Akbar, J., Hou, L., Haji, M., Strain, M., Marsh, J.H., Bryce, A.C., and Kelly, A.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
ISSN (Online):1941-0174

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