160 GHz passively mode-locked AlGaInAs 1.55 μm strained quantum-well lasers with deeply etched intracavity mirror

Hou, L. , Avrutin, E.A., Haji, M., Dylewicz, R., Bryce, A.C. and Marsh, J.H. (2013) 160 GHz passively mode-locked AlGaInAs 1.55 μm strained quantum-well lasers with deeply etched intracavity mirror. IEEE Journal of Selected Topics in Quantum Electronics, 19(4), p. 1100409. (doi: 10.1109/JSTQE.2012.2230318)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Avrutin, E.A., Haji, M., Dylewicz, R., Bryce, A.C., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
ISSN:1077-260X
ISSN (Online):1558-4542
Published Online:20 December 2012

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1ENG - ENGINEERING ELECTRONICS & NANO ENG