Low damage inductively coupled plasma etching of sub-100 nm platinum gate line in SF6/C4F8 for III-V MOSFET fabrication process

Li, X. , Zhou, H., Hill, R., Holland, M. and Thayne, I.G. (2008) Low damage inductively coupled plasma etching of sub-100 nm platinum gate line in SF6/C4F8 for III-V MOSFET fabrication process. In: 34th International Conference on Micro- and Nano-Engineering (MNE 2008), Athens, Greece, 15-18 September 2008,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Hill, Mr Richard and Holland, Dr Martin
Authors: Li, X., Zhou, H., Hill, R., Holland, M., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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