III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs

Hill, R., Moran, D. , Li, X. , Macintyre, D.S., Thoms, S. , Asenov, A., Droopad, R., Passlack, M. and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Venice, Italy, Nov 2008,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Asenov, Professor Asen and Hill, Mr Richard and Moran, Dr David
Authors: Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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