III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs

Hill, R., Moran, D. , Li, X. , Macintyre, D.S., Thoms, S. , Asenov, A. , Droopad, R., Passlack, M. and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Venice, Italy, Nov 2008,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Dr David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen
Authors: Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record