Copper–plated 50 nm T–gate fabrication

Oxland, R.K., Li, X. , Ferguson, S., Bentley, S. and Thayne, I. (2010) Copper–plated 50 nm T–gate fabrication. In: 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2010), Anchorage, AK, USA, 1-4 Jun 2010, pp. 15-24.

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We present a route to the realisation of a scalable, sub-100nm Cu-based T-gates using a subtractive, silicon-compatible process. The process utilises ultra-high resolution e-beam lithography for pattern transfer of the gate foot into silicon nitride. The head is formed using a copper plating process optimised for 200nm dimensions.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Bentley, Dr Steven and Ferguson, Mrs Susan and Li, Dr Xu and Oxland, Dr Richard
Authors: Oxland, R.K., Li, X., Ferguson, S., Bentley, S., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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