In_0.53Ga_0.47As planar Gunn diodes operating at a fundamental frequency of 164 GHz

Khalid, A. et al. (2013) In_0.53Ga_0.47As planar Gunn diodes operating at a fundamental frequency of 164 GHz. IEEE Electron Device Letters, 34(1), pp. 39-41. (doi: 10.1109/LED.2012.2224841)

Abstract

We present the first results of a planar Gunn diode made in In_0.53Ga_0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Li, Professor Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Steer, Dr Matthew
• Authors: Khalid, A., Li, C., Papageorgiou, V., Dunn, G.M., Steer, M.J., Thayne, I.G., Kuball, M., Oxley, C.H., Montes Bajo, M., Stephen, A., Glover, J., and Cumming, D.R.S.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Electron Device Letters
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0741-3106

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
44921	2	TeraHertz planar Gunn diodes	David Cumming	Engineering & Physical Sciences Research Council (EPSRC)	EP/F014791/1	ENG - ENGINEERING ELECTRONICS & NANO ENG