In0.53Ga0.47As planar Gunn diodes operating at a fundamental frequency of 164 GHz

Khalid, A. et al. (2013) In0.53Ga0.47As planar Gunn diodes operating at a fundamental frequency of 164 GHz. IEEE Electron Device Letters, 34(1), pp. 39-41. (doi: 10.1109/LED.2012.2224841)

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We present the first results of a planar Gunn diode made in In<sub>0.53</sub>Ga<sub>0.47</sub>As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Steer, Dr Matthew
Authors: Khalid, A., Li, C., Papageorgiou, V., Dunn, G.M., Steer, M.J., Thayne, I.G., Kuball, M., Oxley, C.H., Montes Bajo, M., Stephen, A., Glover, J., and Cumming, D.R.S.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
449212TeraHertz planar Gunn diodesDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/F014791/1ENG - ENGINEERING ELECTRONICS & NANO ENG