McFarlane, J., Dalgarno, P.A., Gerardot, B.D., Hadfield, R.H. , Warburton, R.J., Karrai, K., Badolato, A. and Petroff, P.M. (2009) Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot. Applied Physics Letters, 94(9), 093113. (doi: 10.1063/1.3086461)
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Abstract
An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ∼ 1 μs. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Hadfield, Professor Robert |
Authors: | McFarlane, J., Dalgarno, P.A., Gerardot, B.D., Hadfield, R.H., Warburton, R.J., Karrai, K., Badolato, A., and Petroff, P.M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
ISSN: | 0003-6951 |
Published Online: | 06 March 2009 |
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