A CMOS image sensor integrated with plasmonic colour filters

Chen, Q., Das, D., Chitnis, D., Walls, K., Drysdale, T.D., Collins, S. and Cumming, D.R.S. (2012) A CMOS image sensor integrated with plasmonic colour filters. Plasmonics, 7(4), pp. 695-699. (doi: 10.1007/s11468-012-9360-6)

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Multi-pixel, 4.5 × 9 μm, plasmonic colour filters, consisting of periodic subwavelength holes in an aluminium film, were directly integrated on the top surface of a complementary metal oxide semiconductor (CMOS) image sensor (CIS) using electron beam lithography and dry etch. The 100 × 100-pixel plasmonic CIS showed full colour sensitivities across the visible range determined by a photocurrent measurement. The filters were fabricated in a simple process utilising a single lithography step. This is to be compared with the traditional multi-step processing when using dye-doped polymers. The intrinsic compatibility of these plasmonic components with a standard CMOS process allows them to be manufactured in a metal layer close to the photodiodes. The incorporation of such plasmonic components may in the future enable the development of advanced CIS with low cost, low cross-talk and increased functionality.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Drysdale, Dr Timothy and Chen, Dr Qin
Authors: Chen, Q., Das, D., Chitnis, D., Walls, K., Drysdale, T.D., Collins, S., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Plasmonics
Publisher:Springer New York LLC

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
387921Extreme sensitivity by engineering plasmon resonance sensorsDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/C509927/1ENG - ENGINEERING ELECTRONICS & NANO ENG