1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

Gallacher, K., Velha, P., Paul, D. , Cecchi, S., Frigerio, J., Chrastina, D. and Isella, G. (2012) 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates. Applied Physics Letters, 101(21), p. 211101. (doi:10.1063/1.4767138)

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Abstract

Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gallacher, Dr Kevin and Paul, Professor Douglas
Authors: Gallacher, K., Velha, P., Paul, D., Cecchi, S., Frigerio, J., Chrastina, D., and Isella, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Journal Abbr.:Appl. Phys. Lett.
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:19 November 2012
Copyright Holders:Copyright © 2012 American Institute of Physics
First Published:First published in Applied Physics Letters 101(21):211101
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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