High speed sensing using ion sensitive field effect transistors

Cumming, D.R.S. , Shields, P.N., Piechocinski, M.S. and Nemeth, B. (2011) High speed sensing using ion sensitive field effect transistors. In: 4th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI), Savelletri di Fasano, Italy, 28-29 June 2011, pp. 57-59. (doi:10.1109/IWASI.2011.6004687)

Cumming, D.R.S. , Shields, P.N., Piechocinski, M.S. and Nemeth, B. (2011) High speed sensing using ion sensitive field effect transistors. In: 4th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI), Savelletri di Fasano, Italy, 28-29 June 2011, pp. 57-59. (doi:10.1109/IWASI.2011.6004687)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1109/IWASI.2011.6004687

Abstract

We present new preliminary data from arrays of ion sensor field effect transistors (ISFETs). Two devices are presented. The first consists of a planar array of ISFETs that are operated as an ion image sensor enabling the direct observation of ion flow over the surface of the chip in real-time. The second is an innovative form of Coulter-counter that is fully implemented in a CMOS-MEMS format. The device is tested as a cytometer by observing the flow of red-blood cells.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Nemeth, Mr Balazs and Cumming, Professor David
Authors: Cumming, D.R.S., Shields, P.N., Piechocinski, M.S., and Nemeth, B.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record