Low specific ohmic contacts to n-type germanium using a low temperatrue NiGe process

Gallacher, K. , Velha, P., Paul, D.J. , MacLaren, I. , Myronov, M. and Leadley, D.R. (2012) Low specific ohmic contacts to n-type germanium using a low temperatrue NiGe process. ECS Transactions, 50(9), pp. 1081-1084. (doi: 10.1149/05009.1081ecst)

Abstract

A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 +/- 0.4) x 10^-7 Ω-cm^2, with a low transfer length of (0.95 +/- 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 10^19 cm-3.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Velha, Mr Philippe and MacLaren, Dr Ian and Paul, Professor Douglas and Gallacher, Dr Kevin
• Authors: Gallacher, K., Velha, P., Paul, D.J., MacLaren, I., Myronov, M., and Leadley, D.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: ECS Transactions
• Publisher: Electrochemical Society
• ISSN: 1938-5862
• ISSN (Online): 1938-6737