Direct Band-gap Electroluminescence from Strained n-Ge Light Emmitting Diodes

Velha, P., Gallacher, K., Dumas, D., Paul, D. , Myronov, M. and Leadley, D.R. (2012) Direct Band-gap Electroluminescence from Strained n-Ge Light Emmitting Diodes. ECS Transactions, 50(9), pp. 305-308.

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Abstract

The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 μm of a few μW, many orders of magnitude larger than the nW previously reported. Three individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 μm on Si with applications for lab-on-a-chip and healthcare.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gallacher, Dr Kevin and Paul, Professor Douglas
Authors: Velha, P., Gallacher, K., Dumas, D., Paul, D., Myronov, M., and Leadley, D.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ECS Transactions
ISSN:1938-5862

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