Vertical scaling of multi-stack Planar Gunn diodes

Khalid, A. , Li, C. and Cumming, D. (2010) Vertical scaling of multi-stack Planar Gunn diodes. 2010 International Semiconductor Conference (CAS), 2, pp. 427-430. (doi:10.1109/SMICND.2010.5650562)

Khalid, A. , Li, C. and Cumming, D. (2010) Vertical scaling of multi-stack Planar Gunn diodes. 2010 International Semiconductor Conference (CAS), 2, pp. 427-430. (doi:10.1109/SMICND.2010.5650562)

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Abstract

Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with the number of stacks. The presence of additional current-limiting mechanisms, such as inactive stacks, are implied if considering the higher currents produced by un-scaled designs or scaled devices at below peak temperatures.

Item Type:Articles
Additional Information:First presented as a paper at the International Semiconductor Conference (CAS), 11-13 Oct 2010, Sinaia, Romania
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Khalid, Dr Ata-ul-Habib and Cumming, Professor David
Authors: Khalid, A., Li, C., and Cumming, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:MicroSystem Technology
Journal Name:2010 International Semiconductor Conference (CAS)
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1545-827X

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