CMOS models transistor distortion

Abuelma'atti, A., Thayne, I. and Abuelma'atti, M.T. (2012) CMOS models transistor distortion. Microwaves and RF, 51(8), pp. 80-86.

Full text not currently available from Enlighten.

Publisher's URL:


Based on symbolically defined devices (SDDs), this model predicts the nonlinear distortion contributions of individual transistors to an RF silicon CMOS design.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain
Authors: Abuelma'atti, A., Thayne, I., and Abuelma'atti, M.T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microwaves and RF
ISSN (Online):2162-1411
Published Online:14 August 2012

University Staff: Request a correction | Enlighten Editors: Update this record