Simpson, R.N., Bordas, S.P.A., Asenov, A. and Brown, A. (2012) Enriched residual free bubbles for semiconductor device simulation. Computational Mechanics, 50(1), pp. 119-133. (doi: 10.1007/s00466-011-0658-6)
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Abstract
This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.
Item Type: | Articles |
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Additional Information: | The authors would like to acknowledge the support of the EPSRC grant EP/G069352/1 “Advanced discretisation strategies for ’atomistic’ nano CMOS simulation”. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Bordas, Dr Stephane and Simpson, Dr Robert and Brown, Mr Andrew and Asenov, Professor Asen |
Authors: | Simpson, R.N., Bordas, S.P.A., Asenov, A., and Brown, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering > Infrastructure and Environment |
Journal Name: | Computational Mechanics |
Publisher: | Springer |
ISSN: | 0178-7675 |
ISSN (Online): | 1432-0924 |
Published Online: | 10 January 2012 |
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