Enriched residual free bubbles for semiconductor device simulation

Simpson, R.N., Bordas, S.P.A., Asenov, A. and Brown, A. (2012) Enriched residual free bubbles for semiconductor device simulation. Computational Mechanics, 50(1), pp. 119-133. (doi: 10.1007/s00466-011-0658-6)

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Abstract

This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.

Item Type:Articles
Additional Information:The authors would like to acknowledge the support of the EPSRC grant EP/G069352/1 “Advanced discretisation strategies for ’atomistic’ nano CMOS simulation”.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Bordas, Dr Stephane and Simpson, Dr Robert and Brown, Mr Andrew and Asenov, Professor Asen
Authors: Simpson, R.N., Bordas, S.P.A., Asenov, A., and Brown, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > Infrastructure and Environment
Journal Name:Computational Mechanics
Publisher:Springer
ISSN:0178-7675
ISSN (Online):1432-0924
Published Online:10 January 2012

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