Charge state switching of deep levels for low-power optical modulation in silicon waveguides

Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M. , Wojcik, G., Goebel, A., Jessop, P.E. and Knights, A.P. (2011) Charge state switching of deep levels for low-power optical modulation in silicon waveguides. Optics Letters, 36(19), pp. 3717-3719. (doi:10.1364/OL.36.003717)

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Abstract

We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon wave guides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides ‘normally-off’ silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Velha, Mr Philippe and Sorel, Professor Marc and De La Rue, Professor Richard
Authors: Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M., Wojcik, G., Goebel, A., Jessop, P.E., and Knights, A.P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
Publisher:Optical Society of America
ISSN:0146-9592

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