Analysis of resonance enhancement in defect-mediated silicon micro-ring photodiodes operating at 1550 nm

Logan, D.F., Murray, K.J., Ackert, J.J., Velha, P., Sorel, M., De La Rue, R.M. , Jessop, P.E. and Knights, A.P. (2011) Analysis of resonance enhancement in defect-mediated silicon micro-ring photodiodes operating at 1550 nm. Journal of Optics, 13(12), p. 125503. (doi:10.1088/2040-8978/13/12/125503)

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Abstract

The resonant defect-enhanced photodiode has received recent attention for its potential use in silicon photonic applications such as wavelength division multiplexing (WDM). Here, we analyze the nature of the resonant enhancement in micro-ring photodiodes by exploring the roles of defect content and ring geometry. Through the use of post-processing to gradually reduce the defect concentration, we demonstrate an optimized peak responsivity of 160 mA W−1 in a ring resonator having a linewidth of 0.12 ± 0.01 nm and 12.8 ± 0.9 dB extinction. We also show that the responsivity is insensitive to ring radius in the range between 10 µm and 20 µm , demonstrate the influence of a drop port waveguide on the resonant enhancement, and discuss design methodologies to enhance performance further.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Velha, Mr Philippe and Sorel, Professor Marc and De La Rue, Professor Richard
Authors: Logan, D.F., Murray, K.J., Ackert, J.J., Velha, P., Sorel, M., De La Rue, R.M., Jessop, P.E., and Knights, A.P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Optics
ISSN:2040-8978

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