Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi:10.1063/1.3702468)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi:10.1063/1.3702468)

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Abstract

The 300-K admittance characteristics of n+ In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS capacitors with a dielectric stack of Gd<sub>0.25</sub>Ga<sub>0.15</sub>O<sub>0.6</sub>/Ga<sub>2</sub>O<sub>3</sub> in as-grown condition are examined in detail and compared to an oxide trap model that we previously introduced. The model explains many of the observed features not contained in the interface state model. By fitting the model to experimental data, we extract a distribution of defect states in space and energy within the oxide and at the oxide/semiconductor interface separately. Oxide states are the dominant defects over a wide range of energy. The defect state densities are not subject to the usual resolution limits of conventional analyses. Using this approach, it is possible to characterize relatively rapidly a wide range of energies at a single temperature without the need for reaching the low or high limits of frequency. The implications for the conventional interface state density (Dit) extraction techniques are explored. It is shown how oxide states can affect the extraction of sample parameters, particularly the insulator capacitance, and can result in a range of extracted Dit values. We believe these contribute to the wide range of Dit reported in the literature from similar admittance characteristics of a number of oxides on In<sub>0.53</sub>Ga<sub>0.47</sub>As.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Long, Professor Andrew and Paterson, Dr Gary and Holland, Dr Martin
Authors: Paterson, G.W., Holland, M.C., Thayne, I.G., and Long, A.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
Published Online:13 April 2012

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