Sub-100 nm structures by neutral atom lithography

Schulze, T., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S. , Pfau, T. and Mlynek, J. (1999) Sub-100 nm structures by neutral atom lithography. Microelectronic Engineering, 46(1-4), pp. 105-108. (doi:10.1016/S0167-9317(99)00026-X)

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Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Bell, Dr Angus
Authors: Schulze, T., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S., Pfau, T., and Mlynek, J.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Microelectronic Engineering
ISSN (Online):1873-5568
Published Online:11 August 1999

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