Schulze, Th., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S., Pfau, T., and Mlynek, J. (1999) Sub-100 nm structures by neutral atom lithography. Microelectronic Engineering, 46 (1-4). pp. 105-108. ISSN 0167-9317 (doi:10.1016/S0167-9317(99)00026-X)
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Publisher's URL: http://dx.doi.org/10.1016/S0167-9317(99)00026-X
Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
|Glasgow Author(s):||Bell, Dr Angus|
|Authors:||Schulze, Th., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S., Pfau, T., and Mlynek, J.|
|College/School:||College of Science and Engineering > School of Physics and Astronomy|
|Journal Name:||Microelectronic Engineering|
|Published Online:||11 August 1999|