Schulze, T., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S. , Pfau, T. and Mlynek, J. (1999) Sub-100 nm structures by neutral atom lithography. Microelectronic Engineering, 46(1-4), pp. 105-108. (doi: 10.1016/S0167-9317(99)00026-X)
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Publisher's URL: http://dx.doi.org/10.1016/S0167-9317(99)00026-X
Abstract
Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Bell, Dr Angus |
Authors: | Schulze, T., Brezger, B., Schmidt, P.O., Mertens, R., Bell, A.S., Pfau, T., and Mlynek, J. |
College/School: | College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Microelectronic Engineering |
ISSN: | 0167-9317 |
ISSN (Online): | 1873-5568 |
Published Online: | 11 August 1999 |
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