Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes

Dylewicz, R., Khokhar, A.Z., Wasielewski, R., Mazur, P. and Rahman, F. (2012) Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes. Applied Physics B: Lasers and Optics, 107(2), pp. 393-399. (doi: 10.1007/s00340-012-5017-6)

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Publisher's URL: http://dx.doi.org/10.1007/s00340-012-5017-6


Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khokhar, Dr Ali
Authors: Dylewicz, R., Khokhar, A.Z., Wasielewski, R., Mazur, P., and Rahman, F.
College/School:College of Science and Engineering > School of Engineering > Biomedical Engineering
Journal Name:Applied Physics B: Lasers and Optics
ISSN:0946-2171

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