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Bak, J.F. et al. (1988) Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the 〈110〉 axis. Physics Letters B, 213 (2). pp. 242-246. ISSN 0370-2693 (doi:10.1016/0370-2693(88)91033-7)
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Abstract
The first results from a broad angular beam experiment on emission of high-energy photons from 170 GeV electrons and positrons are presented. The targets were 0.5 mm thick Si and Ge crystals. A dramatic enhancement in the emitted radiation is found for angles of incidence close to the 〈110〉 axis. The experimental results are compared to a constant-field cascade calculation.
| Item Type: | Article |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s): | Doyle, Prof Anthony |
| Authors: | Bak, J.F., Barberis, D., Brodbeck, T.J., Doyle, A.T., Ellison, R.J., Elsener, K., Hughes-Jones, R.E., Kolya, S.D., Mercer, D., Møller, S.P., Newton, D., Ottewell, P.J., Petersen, J.B.B., Siffert, P., Sørensen, A.H., Thompson, R.J., Uggerhøj, E., and Wilson, G.W. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Physics Letters B |
| Publisher: | Elsevier BV |
| ISSN: | 0370-2693 |
| Published Online: | 15 October 2002 |
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