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Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the 〈110〉 axis

Bak, J.F. et al. (1988) Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the 〈110〉 axis. Physics Letters B, 213 (2). pp. 242-246. ISSN 0370-2693 (doi:10.1016/0370-2693(88)91033-7)

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Abstract

The first results from a broad angular beam experiment on emission of high-energy photons from 170 GeV electrons and positrons are presented. The targets were 0.5 mm thick Si and Ge crystals. A dramatic enhancement in the emitted radiation is found for angles of incidence close to the 〈110〉 axis. The experimental results are compared to a constant-field cascade calculation.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Doyle, Prof Anthony
Authors: Bak, J.F., Barberis, D., Brodbeck, T.J., Doyle, A.T., Ellison, R.J., Elsener, K., Hughes-Jones, R.E., Kolya, S.D., Mercer, D., Møller, S.P., Newton, D., Ottewell, P.J., Petersen, J.B.B., Siffert, P., Sørensen, A.H., Thompson, R.J., Uggerhøj, E., and Wilson, G.W.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Physics Letters B
Publisher:Elsevier BV
ISSN:0370-2693
Published Online:15 October 2002

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