Metal gate strained silicon MOSFETs for microwave integrated circuits

Ternent, G., Edger, D.L., McLelland, H., Williamson, F., Ferguson, S., Kaya, S., Wilkinson, C.D.W., Thayne, I.G. , Fobelets, K. and Hampson, J. (2000) Metal gate strained silicon MOSFETs for microwave integrated circuits. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, Glasgow, UK, 13-14 November 2000, pp. 38-43. (doi:10.1109/EDMO.2000.919024)

Ternent, G., Edger, D.L., McLelland, H., Williamson, F., Ferguson, S., Kaya, S., Wilkinson, C.D.W., Thayne, I.G. , Fobelets, K. and Hampson, J. (2000) Metal gate strained silicon MOSFETs for microwave integrated circuits. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, Glasgow, UK, 13-14 November 2000, pp. 38-43. (doi:10.1109/EDMO.2000.919024)

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Abstract

In this work a III-V MODFET fabrication process has been adapted to fabricate metal gate silicon based MOSFETs. A range of MOSFETs with gate lengths varying from 1 μm to 120 nm were fabricated and all showed good transistor action. The gate metal was Ti/Pd/Au 200 nm thick and both pyramidal and T shaped gates were fabricated. The parasitic gate-source capacitance was reduced by using a spin on dielectric. The strained silicon MOSFETs with rectangular 0.3 μm Ti/Pd/Au gates had measured fT and fmax, of 11 GHz and 12 GHz respectively. By de-embedding the parasitic pad capacitance the intrinsic fT and fmax are 20 GHz and 21 GHz.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Ternent, Dr Gary and Wilkinson, Professor Christopher
Authors: Ternent, G., Edger, D.L., McLelland, H., Williamson, F., Ferguson, S., Kaya, S., Wilkinson, C.D.W., Thayne, I.G., Fobelets, K., and Hampson, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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