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Metal gate strained silicon MOSFETs for microwave integrated circuits

Ternent, G., Edger, D.L., McLelland, H., Williamson, F., Ferguson, S., Kaya, S., Wilkinson, C.D.W., Thayne, I.G., Fobelets, K., and Hampson, J. (2000) Metal gate strained silicon MOSFETs for microwave integrated circuits. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, 13-14 November 2000, Glasgow, UK.

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Abstract

In this work a III-V MODFET fabrication process has been adapted to fabricate metal gate silicon based MOSFETs. A range of MOSFETs with gate lengths varying from 1 μm to 120 nm were fabricated and all showed good transistor action. The gate metal was Ti/Pd/Au 200 nm thick and both pyramidal and T shaped gates were fabricated. The parasitic gate-source capacitance was reduced by using a spin on dielectric. The strained silicon MOSFETs with rectangular 0.3 μm Ti/Pd/Au gates had measured fT and fmax, of 11 GHz and 12 GHz respectively. By de-embedding the parasitic pad capacitance the intrinsic fT and fmax are 20 GHz and 21 GHz.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Ternent, Dr Gary and Wilkinson, Prof Christopher
Authors: Ternent, G., Edger, D.L., McLelland, H., Williamson, F., Ferguson, S., Kaya, S., Wilkinson, C.D.W., Thayne, I.G., Fobelets, K., and Hampson, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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