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Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide

Ternent, G., Ferguson, S., Borsosfoldi, Z., Elgaid, K., Lohdi, T., Edgar, D., Wilkinson, C.D.W., and Thayne, I.G. (1999) Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide. Electronics Letters, 35 (22). pp. 1957-1958. ISSN 0013-5194 (doi:10.1049/el:19991298)

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Abstract

Gold coplanar waveguide (CPW) transmission lines with losses of <0.5 dB/mm at 60 GHz have been produced on CMOS grade silicon substrates using a 15 μm thick layer of either photoresist or polyimide. This process, together with an electroplated interconnect technique, has been used to produce spiral inductors on a 2 Ω/cm n-Si substrate with a Q of 15 and L of 1.2 nH at 6 GHz.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s):Thayne, Prof Iain and Elgaid, Dr Khaled and Ternent, Dr Gary and Wilkinson, Prof Christopher
Authors: Ternent, G., Ferguson, S., Borsosfoldi, Z., Elgaid, K., Lohdi, T., Edgar, D., Wilkinson, C.D.W., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194

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