Microstructural compositional, and optical characterization of GaN grown by metal organic vapour phase epitaxy on ZnO epilayers

Rogers, D.J. et al. (2009) Microstructural compositional, and optical characterization of GaN grown by metal organic vapour phase epitaxy on ZnO epilayers. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(3), pp. 1655-1657. (doi:10.1116/1.3137967)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1116/1.3137967

Abstract

This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c-sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the GaN/ZnO interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ~368 nm (~3.37 eV), which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ~379 nm (~3.28 eV), which had been observed in RT photoluminescence spectra prior to removal of the ZnO.

Item Type:Articles
Keywords:buffer layers, cathodoluminescence, gallium compounds, III-V semiconductors, II-VI semiconductors, MOCVD, photoluminescence, secondary ion mass spectra, semiconductor epitaxial layers, semiconductor growth, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, zinc compounds
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McGrouther, Dr Damien and Chapman, Professor John
Authors: Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Jomard, F., Molinari, M., Troyan, M., McGrouther, D., Chapman, J.N., Razeghi, M., and Ougazzaden, A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023

University Staff: Request a correction | Enlighten Editors: Update this record