80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter

Hou, L. , Haji, M., Li, C. , Akbar, J., Marsh, J.H. and Bryce, A.C. (2011) 80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter. In: Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, Munich, Germany, 22-26 May 2011, (doi: 10.1109/CLEOE.2011.5942606)

Abstract

In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs/InP λ~l .55 μm CPM laser with a low divergence angle and timing jitter. Based on a standard epi-wafer, an additional thin layer (160-nm-thick 1.1Q), hereafter referred to as the far-field reduction layer (FRL), was inserted in the lower n-cladding layer with a 750-nm-thick InP spacer between the active layer and FRL. This design increases the spot size and reduces the internal loss of the cavity, while suppressing higher transverse mode lasing.

• Item Type: Conference Proceedings
• Additional Information: CB12.2 oral presentation
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Professor Chong and Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
• Authors: Hou, L., Haji, M., Li, C., Akbar, J., Marsh, J.H., and Bryce, A.C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Laser Physics Letters
• ISSN: 1612-2011
• ISSN (Online): 1612-202X