80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter

Hou, L. , Haji, M., Li, C. , Akbar, J., Marsh, J.H. and Bryce, A.C. (2011) 80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter. In: Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, Munich, Germany, 22-26 May 2011, (doi:10.1109/CLEOE.2011.5942606)

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Publisher's URL: http://dx.doi.org/10.1109/CLEOE.2011.5942606

Abstract

In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs/InP λ~l .55 μm CPM laser with a low divergence angle and timing jitter. Based on a standard epi-wafer, an additional thin layer (160-nm-thick 1.1Q), hereafter referred to as the far-field reduction layer (FRL), was inserted in the lower n-cladding layer with a 750-nm-thick InP spacer between the active layer and FRL. This design increases the spot size and reduces the internal loss of the cavity, while suppressing higher transverse mode lasing.

Item Type:Conference Proceedings
Additional Information:CB12.2 oral presentation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Li, C., Akbar, J., Marsh, J.H., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Laser Physics Letters
ISSN:1612-2011
ISSN (Online):1612-202X

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