Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Ahn, J., Geppert, I., Gunji, M., Holland, M., Thayne, I. , Eizenberg, M. and McIntyre, P.C. (2011) Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters, 99(23), p. 232902. (doi:10.1063/1.3662966)

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Publisher's URL: http://dx.doi.org/10.1063/1.3662966

Abstract

We describe the electrical properties of atomic layer deposited TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO<sub>2</sub> film contributes to a significant accumulation capacitance increase (∼33%) observed after a forming gas anneal at 400 °C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al<sub>2</sub>O<sub>3</sub> single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO<sub>2</sub> relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Holland, Dr Martin
Authors: Ahn, J., Geppert, I., Gunji, M., Holland, M., Thayne, I., Eizenberg, M., and McIntyre, P.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
Published Online:05 December 2011
Copyright Holders:Copyright © 2011 American Institute of Physics
First Published:First published in Applied Physics Letters 99(23):232902
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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