A low damage etching process of sub-100 nm platinum gate line for III-V metal-oxide-semiconductor field-effect transistor fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8

Li, X. , Zhou, H., Hill, R.J.W., Holland, M. and Thayne, I. (2012) A low damage etching process of sub-100 nm platinum gate line for III-V metal-oxide-semiconductor field-effect transistor fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51(1), (doi:10.1143/JJAP.51.01AB01)

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Publisher's URL: http://jjap.jsap.jp/link?JJAP/51/01AB01/

Abstract

This paper presents a low damage inductively coupled plasma (ICP) etching process to define sub-100 nm platinum gate lines for III–V metal–oxide–semiconductor field-effect transistors (MOSFETs) fabrication. In this process, a negative resist etching mask patterned by electron beam lithography is used to define the high resolution platinum features using a combination of SF<sub>6</sub> and C<sub>4</sub>F<sub>8</sub> etch gases. Systematic investigation of the impact of various etch conditions, such as coil and platen power, gas composition, chamber pressure on etch rate and profile, resulted in a controllable etching process. Optical emission spectra of the ICP plasma have been checked for better understanding the etching mechanism. Etch induced damage of the underlying device channel of the III–V MOSFET materials has been evaluated through monitoring the sheet resistance variation of the materials at room temperature, which showed the process does not significantly degrade the electrical properties of the underlying device channel under optimized conditions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Holland, Dr Martin
Authors: Li, X., Zhou, H., Hill, R.J.W., Holland, M., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Japanese Journal of Applied Physics
ISSN:0021-4922
ISSN (Online):1347-4065
Published Online:20 January 2012

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