Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT

Balaz, D., Kalna, K., Kuball, M., Hayes, D.G., Uren, M.J. and Asinov, A. (2009) Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT. In: 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009), Malaga, Spain, 17-20 May 2009,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Balaz, Dr Daniel and Kalna, Dr Karol
Authors: Balaz, D., Kalna, K., Kuball, M., Hayes, D.G., Uren, M.J., and Asinov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
416341Novel time resolved thermal imaging - AlGaN/GaN heterostructure field effect transistorsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/D04698X/1Electronic and Nanoscale Engineering