Reflectivity of deep-etched InGaAs-InP waveguide Bragg reflectors

Chong, H.M.H., Tan, W.K. and Bryce, A.C. (2007) Reflectivity of deep-etched InGaAs-InP waveguide Bragg reflectors. Physica Status Solidi C, 4(5), pp. 1646-1648. (doi: 10.1002/pssc.200674267)

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Deep etched Bragg reflector gratings in InGaAs-InP waveguide structures have been realized. The width of the waveguide was 2 µm and was dry etched to a depth of more than 1.5 μm using CH4/H2-based chemistry. The Bragg reflectors were designed to be first order and to have a large bandwidth – with one to three slots in the waveguide structure. The single slot reflector has a width of 190 nm and the period of other two-slots grating is 420 nm and slot width of ∼200 nm.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Chong, Dr Harold and Bryce, Prof Ann
Authors: Chong, H.M.H., Tan, W.K., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physica Status Solidi C
ISSN (Online):1610-1642
Published Online:04 April 2007

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
353571Optoelectronic device integration technologies for the 21st CenturyAnn BryceEngineering & Physical Sciences Research Council (EPSRC)GR/S79787/01Electronic and Nanoscale Engineering