Chong, H.M.H., Tan, W.K. and Bryce, A.C. (2007) Reflectivity of deep-etched InGaAs-InP waveguide Bragg reflectors. Physica Status Solidi C, 4(5), pp. 1646-1648. (doi: 10.1002/pssc.200674267)
Full text not currently available from Enlighten.
Abstract
Deep etched Bragg reflector gratings in InGaAs-InP waveguide structures have been realized. The width of the waveguide was 2 µm and was dry etched to a depth of more than 1.5 μm using CH4/H2-based chemistry. The Bragg reflectors were designed to be first order and to have a large bandwidth – with one to three slots in the waveguide structure. The single slot reflector has a width of 190 nm and the period of other two-slots grating is 420 nm and slot width of ∼200 nm.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Chong, Dr Harold and Bryce, Prof Ann |
Authors: | Chong, H.M.H., Tan, W.K., and Bryce, A.C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Physica Status Solidi C |
ISSN: | 1862-6351 |
ISSN (Online): | 1610-1642 |
Published Online: | 04 April 2007 |
University Staff: Request a correction | Enlighten Editors: Update this record