Simulation of hole-mobility in doped relaxed and strained Ge

Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi:10.1016/j.mee.2010.11.017)

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Abstract

As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Asenov, Professor Asen and Riddet, Mr Craig
Authors: Watling, J.R., Riddet, C., Chan, K.H., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
ISSN:0167-9317
Published Online:17 November 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
467281Renaissance GermaniumAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/F032633/1Electronic and Nanoscale Engineering