Abid, K., Wang, X., Khokhar, A. Z., Watson, S., Al-Hasani, S. and Rahman, F. (2011) Electrically tuneable spectral responsivity in gated silicon photodiodes. Applied Physics Letters, 99(23), p. 231104. (doi: 10.1063/1.3665613)
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Publisher's URL: http://dx.doi.org/10.1063/1.3665613
Abstract
We report the observation of electrically tuneable spectral responsivity in silicon-based photodetectors. The current flowing through a lateral p-i-n junction photodiode can be changed by changing either the gate bias or the intensity of incident light, with the devices exhibiting typical optical responsivities of 65 A/W. The peak sensitivity of the device can be changed over the entire visible region by changing the gate voltage in a 5 V range. This happens because with increasing gate bias, an accumulation layer of holes is pulled closer to the Si-SiO2 interface, enhancing the blue response of the device.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watson, Dr Scott and Khokhar, Dr Ali and Abid, Mr Kamran and Rahman, Dr Faiz and Wang, Dr Xingsheng |
| Authors: | Abid, K., Wang, X., Khokhar, A. Z., Watson, S., Al-Hasani, S., and Rahman, F. |
| College/School: | College of Science and Engineering > School of Engineering > Biomedical Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 06 December 2011 |
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