Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study

Wang, X., Brown, A.R., Idris, N., Markov, S., Roy, G. and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58(8), pp. 2293-2301. (doi: 10.1109/TED.2011.2149531)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2011.2149531

Abstract

This paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high-<i>k/</i>metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage variability in scaled devices in the presence of dominant variability sources (MGG, random discrete dopants, and line edge roughness). The placement of metal grains is found to also contribute to the total MGG variability. This paper presents the relative importance of MGG compared with other statistical variability sources. It is found that MGG can distort and even dominate the threshold-voltage statistical distribution when the metal grain size cannot be adequately controlled.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Wang, Dr Xingsheng and Roy, Dr Gareth and Asenov, Professor Asen and Brown, Mr Andrew
Authors: Wang, X., Brown, A.R., Idris, N., Markov, S., Roy, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Published Online:31 May 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
501811ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)Asen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/G04130X/1Electronic and Nanoscale Engineering