Czochralski silicon radiation detectors

Bates, A. G. (2006) Czochralski silicon radiation detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 569(1), pp. 73-76. (doi:10.1016/j.nima.2006.09.016)

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Publisher's URL: http://dx.doi.org/10.1016/j.nima.2006.09.016

Abstract

An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation. Silicon produced using the Czochralski growth method has an intrinsically higher concentration of oxygen than the standard silicon growth method, float zone, which is extensively used in HEP radiation detectors. The research reviewed in this paper aims to understand the microscopic and macroscopic behaviour of Czochralski and compares the performance to standard silicon radiation detectors. The majority of this work has been performed in the framework of the RD50 collaboration.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Bates, Mrs Alison
Authors: Bates, A. G.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Publisher:Elsevier
ISSN:0168-9002
ISSN (Online):1872-9576
Published Online:29 September 2006

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
398471First measurement of the CKM triangle gamma at LHCbChristopher ParkesScience & Technologies Facilities Council (STFC)PP/C001257/1Physics and Astronomy