160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap

Hou, L. , Haji, M., Bryce, A.C. and Marsh, J.H. (2011) 160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap. In: IEEE Photonics 2011 Conference (IPC11), Arlington, VA, 9-13 Oct 2011, pp. 751-752. (doi:10.1109/PHO.2011.6110768)

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Abstract

Monolithic ~1.55μm colliding-pulse mode-locked AlGaInAs/InP lasers with 3 and 5 quantum wells are compared. The 3 well device emitted pulses at 162GHz, with a width of 0.98ps, energy of 0.16pJ and time-bandwidth product of 0.47.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Bryce, A.C., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering