Modulational instability in a silicon-on-insulator directional coupler: role of the coupling-induced group velocity dispersion

Ding, W. et al. (2012) Modulational instability in a silicon-on-insulator directional coupler: role of the coupling-induced group velocity dispersion. Optics Letters, 37(4), pp. 668-670. (doi:10.1364/OL.37.000668)

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Publisher's URL: http://dx.doi.org/10.1364/OL.37.000668

Abstract

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires decreases, the increasing dispersion of the coupling makes the GVD in the symmetric supermode more normal and suppresses the bandwidth of the MI gain observed for larger separations.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Sorel, Professor Marc and Strain, Dr Michael and De La Rue, Professor Richard
Authors: Ding, W., Staines, O.K., Hobbs, G.D., Gorbach, A.V., de Nobriga, C., Wadsworth, W.J., Knight, J.C., Skryabin, D.V., Strain, M.J., Sorel, M., and De La Rue, R.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
Publisher:Optical Society of America
ISSN:0146-9592
Published Online:14 February 2012

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
502591Nonlinear photonics in silicon-on-insulator nanostructuresMarc SorelEngineering & Physical Sciences Research Council (EPSRC)EP/G043906/1Electronic and Nanoscale Engineering