Akbar, J., Hou, L. , Haji, M., Strain, M.J., Marsh, J. , Bryce, A.C. and Kelly, A. (2012) High power (130 mW) 40 GHz 155 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers. Optics Letters, 37(3), pp. 344-346. (doi: 10.1364/OL.37.000344)
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Abstract
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1W.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Strain, Dr Michael and Haji, Dr Mohsin and Kelly, Professor Anthony |
Authors: | Akbar, J., Hou, L., Haji, M., Strain, M.J., Marsh, J., Bryce, A.C., and Kelly, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Optics Letters |
Publisher: | Optical Society of America |
ISSN: | 0146-9592 |
ISSN (Online): | 1539-4794 |
Published Online: | 20 January 2012 |
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