High power (130 mW) 40 GHz 155 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers

Akbar, J., Hou, L. , Haji, M., Strain, M.J., Marsh, J. , Bryce, A.C. and Kelly, A. (2012) High power (130 mW) 40 GHz 155 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers. Optics Letters, 37(3), pp. 344-346. (doi: 10.1364/OL.37.000344)

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Abstract

High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1W.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Strain, Dr Michael and Haji, Dr Mohsin and Kelly, Professor Anthony
Authors: Akbar, J., Hou, L., Haji, M., Strain, M.J., Marsh, J., Bryce, A.C., and Kelly, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
Publisher:Optical Society of America
ISSN:0146-9592
ISSN (Online):1539-4794
Published Online:20 January 2012

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering