80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter

Hou, L. , Haji, M., Li, C. , Qiu, B.C. and Bryce, A.C. (2011) 80-GHz AlGaInAs/InP 1.55 mu m colliding-pulse mode-locked laser with low divergence angle and timing jitter. Laser Physics Letters, 8(7), pp. 535-540. (doi: 10.1002/lapl.201110029)

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Abstract

We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3-quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4-80 MHz), while demonstrating a low divergence angle (12.7 degrees x26.3 degrees) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Professor Chong and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Li, C., Qiu, B.C., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Laser Physics Letters
Publisher:Institute of Physics
ISSN:1612-2011
ISSN (Online):1612-202X
Published Online:02 May 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering