10-GHz AlGaInAs/InP 1.55-mu m passively mode-locked laser with low divergence angle and timing jitter

Hou, L. , Haji, M., Qiu, B., Akbar, J., Bryce, A.C. and Marsh, J.H. (2011) 10-GHz AlGaInAs/InP 1.55-mu m passively mode-locked laser with low divergence angle and timing jitter. IEEE Photonics Technology Letters, 23(15), pp. 1079-1081. (doi: 10.1109/LPT.2011.2156403)

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Publisher's URL: http://dx.doi.org/10.1109/LPT.2011.2156403

Abstract

We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3-quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4-80 MHz), while demonstrating a low divergence angle (12.7 degrees x26.3 degrees) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Akbar, Mr Jehan and Haji, Dr Mohsin and Hou, Dr Lianping and Bryce, Prof Ann
Authors: Hou, L., Haji, M., Qiu, B., Akbar, J., Bryce, A.C., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:19 May 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering