Spectral dynamical behavior in passively mode-locked semiconductor lasers

Stolarz, P.M., Javaloyes, J., Mezosi, G., Hou, L., Ironside, C.N., Sorel, M., Bryce, A.C. and Balle, S. (2011) Spectral dynamical behavior in passively mode-locked semiconductor lasers. IEEE Photonics Journal, 3(6), pp. 1067-1082. (doi:10.1109/JPHOT.2011.2172403)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1109/JPHOT.2011.2172403

Abstract

In this paper, we present an experimental and theoretical study of passive mode-locking in semiconductor Fabry-Perot, quantum-well, lasers operating at around 1550 nm and producing picosecond pulses at a repetition frequency of 40 GHz. The different regimes that occur as the reverse bias voltage applied to the saturable absorber (SA) section or the bias current injected into the amplifier section are characterized both in the time and frequency/wavelength domains. Our results reveal that the lasers display spectral competition between the gain of the amplifier section and the absorption of the SA, with variations of the lasing wavelength up to 25 nm as the bias conditions are changed. These wavelength variations result from the thermal drift of the SA band-edge due to Joule heating by the generated photocurrent and from the competition between two possible lasing regions placed either at the amplifier gain peak or near the band-edge of the SA. The experimental observations are satisfactorily reproduced and explained in the framework of a Traveling Wave Model complemented by a time-domain description of the semiconductor susceptibility.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mezosi, Mr Gabor and Sorel, Professor Marc and Ironside, Professor Charles and Bryce, Prof Ann and Hou, Dr Lianping and Javaloyes, Dr Julien and Stolarz, Mr Piotr
Authors: Stolarz, P.M., Javaloyes, J., Mezosi, G., Hou, L., Ironside, C.N., Sorel, M., Bryce, A.C., and Balle, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Journal
ISSN:1943-0655
ISSN (Online):1943-0655

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering