10 GHz AlGaInAs/InP 155 μm passively mode-locked laser with low divergence angle and timing jitter

Hou, L. , Haji, M., Marsh, J.H. and Bryce, A.C. (2011) 10 GHz AlGaInAs/InP 155 μm passively mode-locked laser with low divergence angle and timing jitter. Optics Express, 19(26), B75-B80. (doi: 10.1364/OE.19.000B75)

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Abstract

We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well M

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Marsh, J.H., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN:1094-4087
ISSN (Online):1094-4087
Published Online:16 November 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering